71013 tkim tc-00002962/71112 tkim/52506pe msim tb-00002278/52101 tsim ta-324 no.6920-1/8 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 mch6613 power mosfet 30v, 0.35a, 3.7 ? 30v, ? 0.2a, 10.4 , complementary dual mcph6 features ? the mch6613 incorporates two elements in the same package which are n-channel and p-channel low on resistance and high-speed switching mosfets, thereby enabling high-density mounting ? excellent on-resistance characteristic ? 1.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain to source voltage v dss 30 --30 v gate to source voltage v gss 10 10 v drain current (dc) i d 0.35 --0.2 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.4 --0.8 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7022a-006 ordering number : en6920c ordering & package information device package shipping memo MCH6613-TL-E mcph6 sc-88, sc-70-6, sot-363 3,000 pcs./reel pb-free packing type : tl marking electrical connection tl 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 MCH6613-TL-E fm lot no. lot no. 65 4 12 3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
mch6613 no.6920-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =80ma 150 220 ms static drain to source on-state resistance r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss 5.9 pf reverse transfer capacitance crss 2.3 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 65 ns turn-off delay time t d (off) 155 ns fall time t f 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate to source charge qgs 0.26 nc gate to drain ?miller? charge qgd 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v [p-channel] drain to source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--100 a --0.4 --1.4 v forward transfer admittance | yfs | v ds =--10v, i d =--50ma 80 110 ms static drain to source on-state resistance r ds (on)1 i d =--50ma, v gs =--4v 8 10.4 r ds (on)2 i d =--30ma, v gs =--2.5v 11 15.4 r ds (on)3 i d =--1ma, v gs =--1.5v 27 54 input capacitance ciss v ds =--10v, f=1mhz 7.5 pf output capacitance coss 5.7 pf reverse transfer capacitance crss 1.8 pf turn-on delay time t d (on) see speci ed test circuit. 24 ns rise time t r 55 ns turn-off delay time t d (off) 120 ns fall time t f 130 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--100ma 1.43 nc gate to source charge qgs 0.18 nc gate to drain ?miller? charge qgd 0.25 nc diode forward voltage v sd i s =--100ma, v gs =0v --0.83 --1.2 v
mch6613 no.6920-3/8 switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% 4v 0v v in v in p. g 50 g s i d =80ma r l =187.5 v dd =15v v ou t d mch6613 pw=10 s d.c. 1% 0v --4v v in v in p. g 50 g s i d = --50ma r l =300 v dd = --15v v ou t d mch6613 i d -- v ds i d -- v gs drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta= --25 c 25 c 75 c it00029 it00030 [pch] [pch] [nch] [nch] 0 0 --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 v gs = --1.5v --3.5v --6.0v --2.0v --4.0v --3.0v --2.5v 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 0 --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 v ds = --10v it00077 it00078 ta= --25 c 25 c 75 c
mch6613 no.6920-4/8 r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a 0.01 0.1 23 57 23 5 10 1.0 7 5 3 2 v gs =2.5v 1.0 0.001 0.01 23 57 23 5 100 10 7 5 3 2 7 5 3 2 v gs =1.5v ta=75 c --25 c --25 c 25 c ta=75 c it00033 it00034 [pch] [pch] [nch] [nch] --0.01 1.0 --0.1 10 7 5 3 2 100 7 5 3 2 3 2 7 5 3 2 v gs = --2.5v --0.0001 --0.001 1000 7 5 3 2 100 7 5 3 2 10 23 23 57 v gs = --1.5v it00081 it00082 --25 c --25 c 25 c ta=75 c ta=75 c 25 c 25 c r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a 0.01 0.1 23 57 23 5 10 7 5 3 2 1.0 25 c --25 c ta=75 c it00032 v gs =4v [pch] [nch] --0.01 1.0 --0.1 23 57 23 100 7 5 3 2 10 7 5 3 2 v gs = --4v it00080 ta=75 c --25 c 25 c r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c it00031 i d =40ma 80ma [pch] [nch] 0 0 -- 1 -- 2 -- 3 5 -- 4 10 -- 5 15 20 25 -- 6 30 --7 --8 --9 --10 ta=25 c it00079 i d = --30ma --50ma
mch6613 no.6920-5/8 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 diode forward voltage, v sd -- v source current, i s -- a v gs =0v i s -- v sd --25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd =15v v gs =4v t d (on) t r t f t d (off ) it00037 it00038 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 --0.1 5 3 2 7 5 3 2 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd v gs =0v it00085 -- 2 5 c 25 c ta=75 c --0.01 23 57 10 7 5 3 2 7 5 3 2 --0.1 1000 100 drain current, i d -- a sw time -- i d switching time, sw time -- ns it00086 v dd = --15v v gs = --4v t f t r t d (off) t d (on) [pch] [nch] [nch] [pch] drain current, i d -- a drain current, i d -- a 0.01 0.01 0.1 23 57 23 5 0.1 7 5 3 2 7 5 3 2 1.0 v ds =10v 75 c ta= --25 c it00036 25 c [pch] [nch] --0.01 0.01 --0.1 1.0 7 5 3 2 7 5 3 2 0.1 3 2 7 5 3 2 v ds = --10v it00084 ta= --25 c 75 c 25 c r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- ambient temperature, ta -- c r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- ambient temperature, ta -- c --60 0 --40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v it00035 [pch] [nch] --60 4 2 --40 6 --20 8 10 0 12 14 20 40 16 60 18 80 100 120 140 160 i d = --30ma, v gs = --2.5v i d = --50ma, v gs = --4.0v it00083 | y fs | -- i d forward transfer admittance, | y fs | -- s | y fs | -- i d forward transfer admittance, | y fs | -- s
mch6613 no.6920-6/8 2 3 2 3 5 7 2 3 5 7 1.0 0.1 0.01 0 20 40 60 100 120 140 0 80 1.0 0.6 0.4 0.2 0.8 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it02879 a s o drain to source voltage, v ds -- v drain current, i d -- a 23 57 23 5 1.0 10 it02877 when mounted on ceramic substrate (900mm 2 ? 0.8mm)1unit i d =0.35a i dp =1.4a(pw 10 s) 100ms dc operation 10ms 1ms operation in this area is limited by r ds (on). [pch] [pch, nch] [nch] a s o 23 5 5 723 7 5 3 2 7 5 3 2 --0.01 --0.1 --1.0 --1.0 --10 drain to source voltage, v ds -- v drain current, i d -- a operation in this area is limited by r ds (on). dc operation i dp = --0.8a(pw 10 s) i d = --0.2a 1ms 10ms 100ms it02878 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm)1unit ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm)1unit 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v v ds =10v i d =150ma it00040 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 1.6 0.6 0.8 1.0 1.2 1.4 0.2 0.4 -- 9 --10 total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v v ds = --10v i d = --100ma it00088 [pch] [nch] 0 2 4 6 8 101214161820 1.0 10 7 5 3 2 7 5 3 2 100 drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss coss crss f=1mhz ciss, coss, crss -- v ds it00039 0 1.0 -- 5 10 7 5 3 2 7 5 3 2 --10 --15 100 --20 --30 --25 drain to source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz it00087 ciss coss crss [pch] [nch]
mch6613 no.6920-7/8 outline drawing land pattern example MCH6613-TL-E mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
mch6613 ps no.6920-8/8 note on usage : since the mch6613 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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